Nl. Jeon et al., SELECTIVE CHEMICAL-VAPOR-DEPOSITION OF PLATINUM AND PALLADIUM DIRECTED BY MONOLAYERS PATTERNED USING MICROCONTACT PRINTING, Langmuir, 13(14), 1997, pp. 3833-3838
High-purity platinum and palladium thin films can be deposited selecti
vely by combining microcontact printing (mu CP) and metal-organic chem
ical vapor deposition (MOCVD). Printed patterns of octadecyltrichloros
ilane thin films are used to direct the selective deposition of the me
tallic thin films from bis(hexafluoroacetylacetonato)platinum(II), Pt(
hfac)(2), and bis(hexafluoroacetylacetonato)palladium(II), Pd(hfac)(2)
, in the presence of hydrogen. This process has been used successfully
to fabricate Pt and Pd patterns on substrates such as titanium nitrid
e, indium tin oxide, silicon dioxide, and sapphire. Features with size
s as small as 1.5 mu m have been deposited by this combined mu CP-MOCV
D method. The Pt and Pd films were found to be free of detectable impu
rities, as measured by X-ray photoelectron and Auger electron spectros
copies. Grain sizes in the deposits can also be varied. We found, for
example, that the Pt film growth process yields heavily faceted deposi
ts whose habits depend strongly on the temperature of the substrate du
ring processing. Addition of water vapor to the reactor feed during pl
atinum chemical vapor deposition increased the number of nucleation si
tes, thus reducing the grain size, but did not otherwise affect the de
position rate to a significant degree. We describe in this report how
this photolithography-free process might simplify the patterning of me
tal and other thin films of interest in integrated circuit fabrication
.