On the calculation of gate tunneling currents in ultra-thin metal-insulator-semiconductor capacitors

Authors
Magnus, W Schoenmaker, W
Citation
W. Magnus et W. Schoenmaker, On the calculation of gate tunneling currents in ultra-thin metal-insulator-semiconductor capacitors, MICROEL REL, 41(1), 2001, pp. 31-35
Citations number
14
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
41
Issue
1
Year of publication
2001
Pages
31 - 35
Database
ISI
SICI code
0026-2714(200101)41:1<31:OTCOGT>2.0.ZU;2-M
Abstract
The calculation of gate tunneling currents in metal-insulator-semiconductor structures with ultra-thin gate stacks directly relies on quantum mechanic al principles. In this paper, it is illustrated that well-known techniques based on elementary quantum physics and statistical mechanics can successfu lly be applied to solve some conceptual problems encountered on calculating the gate current and the charge distribution. (C) 2001 Elsevier Science Lt d. All rights reserved.