Monte Carlo simulation of electronic characteristics in short channel delta-doped AlInAs/GaInAs HEMTs

Citation
J. Mateos et al., Monte Carlo simulation of electronic characteristics in short channel delta-doped AlInAs/GaInAs HEMTs, MICROEL REL, 41(1), 2001, pp. 73-77
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
41
Issue
1
Year of publication
2001
Pages
73 - 77
Database
ISI
SICI code
0026-2714(200101)41:1<73:MCSOEC>2.0.ZU;2-O
Abstract
We present a microscopic analysis of electronic noise in short channel F-do ped AlInAs/GaInAs HEMTs. A classical Monte Carlo device simulation, appropr iately modified to locally introduce the effects of electron degeneracy and nonequilibrium screening, is used for the calculations. Even if the energy quantization in the channel is not taken into account in the Monte Carlo m odel, its validity has been checked by means of the comparison with experim ental results of static characteristics, small signal behavior and noise pe rformance in a recessed 0.1 mum T-gate delta -doped HEMT (InP based). The g eometry and layer structure of the simulated HEMT is completely realistic, including recessed gate and delta -doping configuration and also the T-shap e of the gate and the dielectric disposition has been included in the simul ation (C) 2001 Elsevier Science Ltd. All rights reserved.