J. Mateos et al., Monte Carlo simulation of electronic characteristics in short channel delta-doped AlInAs/GaInAs HEMTs, MICROEL REL, 41(1), 2001, pp. 73-77
We present a microscopic analysis of electronic noise in short channel F-do
ped AlInAs/GaInAs HEMTs. A classical Monte Carlo device simulation, appropr
iately modified to locally introduce the effects of electron degeneracy and
nonequilibrium screening, is used for the calculations. Even if the energy
quantization in the channel is not taken into account in the Monte Carlo m
odel, its validity has been checked by means of the comparison with experim
ental results of static characteristics, small signal behavior and noise pe
rformance in a recessed 0.1 mum T-gate delta -doped HEMT (InP based). The g
eometry and layer structure of the simulated HEMT is completely realistic,
including recessed gate and delta -doping configuration and also the T-shap
e of the gate and the dielectric disposition has been included in the simul
ation (C) 2001 Elsevier Science Ltd. All rights reserved.