A novel approach for determining the AlGaAs/GaAs HBT small-signal equivalent circuit elements

An efficient method for extracting the small-signal model parameters of an HBT transistor is proposed. The strong correlation between the extrinsic an d intrinsic HBT model parameters, which can be employed to drastically redu ce the search space, is exploited. For the first time in HBT modeling, an e xplicit equation of the total extrinsic elements, which results in a reduct ion of the number of unknowns for optimization, is derived. This novel appr oach can yield a good fit between measured and simulated S-parameters. (C) 2001 John Wiley & Sons, Inc.