Radiation hardness and lifetime studies of photodiodes for the optical readout of the ATLAS semiconductor tracker

A large sample (96) of epitaxial Si PIN photodiodes has been irradiated by similar to 1 MeV neutrons and 24 GeV protons with fluences up to 10(15) equ ivalent 1 MeV neutrons cm(-2) in order to test their suitability for use in the optical readout of the ATLAS semiconductor tracker and pixel detector at the CERN Large Hadron Collider. After an initial reduction of 30% the re sponsivity remains constant up to the maximum fluence. The rise and fall ti mes are not significantly affected and remain below ins. Although the dark current increases linearly with increasing neutron fluence, its level remai ns below 100 nA which is negligible in comparison to the operating photocur rent which is above 100 muA. Enhanced ageing studies at 60 degreesC have al so been carried out and no failure has occurred after an equivalent of 360 years of operation. (C) 2001 Elsevier Science B.V. All rights reserved.