High-temperature device performance and thermal characteristics of GaAs MESFETs on CVD diamond substrates

Authors
Zhu, LH Christou, A Barbe, DF
Citation
Lh. Zhu et al., High-temperature device performance and thermal characteristics of GaAs MESFETs on CVD diamond substrates, QUAL REL EN, 16(6), 2000, pp. 527-536
Citations number
15
Categorie Soggetti
Engineering Management /General
Journal title
QUALITY AND RELIABILITY ENGINEERING INTERNATIONAL
ISSN journal
07488017 → ACNP
Volume
16
Issue
6
Year of publication
2000
Pages
527 - 536
Database
ISI
SICI code
0748-8017(200011/12)16:6<527:HDPATC>2.0.ZU;2-7
Abstract
The temperature degradation and high-temperature characteristics of GaAs FE Ts on CVD diamond heat sinks were investigated by modeling the high-tempera ture electrical characteristics for GaAs MESFETs and by experimentally meas uring the elevated-temperature degradation The bias region for the Zero-Tem perature Coefficient (ZTC) was determined. The thermal characteristics were determined by infra-red microscopy and the results were correlated with a finite element analysis calculation of GaAs FET thermal distribution. Copyr ight (C) 2000 John Wiley & Sons, Ltd.