Ultrathin Pb film growth on Cu(111) studied by photoemission

Citation
Mc. Xu et al., Ultrathin Pb film growth on Cu(111) studied by photoemission, SOL ST COMM, 117(5), 2001, pp. 327-332
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
117
Issue
5
Year of publication
2001
Pages
327 - 332
Database
ISI
SICI code
0038-1098(2001)117:5<327:UPFGOC>2.0.ZU;2-8
Abstract
The valence bands and the Pb 5d, Cu 3p core levels of Pb films evaporated o n Cu(111) were measured by synchrotron radiation photoemission and characte rized by low-energy electron diffraction (LEED) and Auger electron spectros copy (AES). The variation of the surface state at the center of the surface Brillouin zone (SBZ) of Cu(111) with Pb coverage shows that the submonolay er Pb grows on Cu(111) at room temperature (RT) as two-dimensional (2D) isl ands. With the Pb coverage increasing, the Pb 5d(5/2) core level shifts to higher binding energy monotonically. While the Cu 3p(3/2) core level is shi fted toward higher binding energy by about 120 meV due to the deposition of 1.0 ML Pb. At low Pb coverage, subsequent annealing at 200 degreesC gives rise to Pb-Cu surface alloy formation in the first layer of Cu(111). The Pb 5d core level is shifted toward Fermi level by 20 similar to 30 meV due to the surface alloying. An assumption about electron charge transfer from Cu to Pb was adopted to interpret the observed core level shifts. (C) 2001 Pu blished by Elsevier Science Ltd.