The ablation threshold in amorphous diamondlike carbon films exposed to anArF excimer laser radiation

An experimental study of the laser-induced ablation threshold in amorphous diamondlike carbon films is reported. The aim is to assess the possibility of using the material as a photoresist in vacuum-ultraviolet laser lithogra phy. Grown on silicon substrates, 10-nm films were il radiated by 20-ns pul ses of a 193-nm ArF excimer laser with variable pulse energy per unit area Ep. It is found that the etch rate is very low if E-p < 20 mJ/cm(2), wherea s a single pulse suffices to remove the film completely if E-p = 60 mJ/cm(2 ). This is attributed to an increase in the thermal ablation component. (C) 2000 MAIK "Nauka/Interperiodica".