Indium segregation kinetics in InGaAs ternary compounds

A rate equation model is applied to analyze surface segregation in InGaAs a nd related compounds during the growth of these materials by molecular beam epitaxy (MBE). General trends in segregation are examined as a function of temperature, the V/III ratio and the type of substrate. It is suggested th at the principal segregation mechanism is related to a near-equilibrium est ablished between the volatile group III species on the growth surface and i n the crystal bulk. In particular, this mechanism results in different mani festations of surface segregation for InGaAs and GaAlAs. (C) 2000 Elsevier Science B.V. All rights reserved.