The controlled growth of SiC heteropolytypic structures consisting of hexag
onal (alpha-) and cubic (3C-) polytypes has been performed by solid-source
molecular beam epitaxy. On on-axis substrates, 4H/3C/4H-SiC(0001) and 6H/3C
/6H-SiC(0001) structures were obtained by first growing some nanometers thi
ck 3C-SiC layer at lower temperatures (1550 K) and Si-rich conditions, and
subsequent growth of alpha -SiC on top of the 3C-SiC layer at higher temper
atures (1600 K) under more C-rich conditions. On off-axis substrates, multi
-heterostructures consisting of 4H/3C- or 6H/3C-stacking sequences were als
o obtained by first nucleating selectively wire-like 3C-SiC nuclei on the t
erraces of well-prepared off-axis alpha -SiC(0001) substrates at low T (< 1
500 K). Next, SiC was grown further in a step-flow growth mode at higher T
and Si-rich condition. After the growth many wire-like regions consisting o
f 3C-SiC were found within the hexagonal SiC layer material matrix indicati
ng a simultaneous step-how growth of both the cubic and the hexagonal SiC m
aterial. (C) 2000 Elsevier Science B.V. All rights reserved.