InAs/GaAs multiple quantum dot structures grown by LP-MOVPE

Structures with self-organised InAs quantum dots in a GaAs matrix were grow n by the low pressure metal-organic vapour phase epitaxy (LP-MOVPE) techniq ue. Photoluminescence and atomic force microscopy were used as the main cha racterisation methods for the growth optimisation. The properties of multip le-stacked quantum dot structures are influenced by the thickness of the Ga As separation layers (spacers) between quantum dot-containing InAs layers, by the InAs layer thickness, by arsine partial pressure during growth, and by group III precursor flow interruption time. (C) 2000 Elsevier Science B. V. All rights reserved.