Interface structure in the growth of semiconductor crystals using the Bridgman-Stockbarger method

In this paper we assume, like in Balint et al. [Mater. Sci. Semiconductor P rocess. V3/3 (2000) 115-121], that the melt/solid interface in the case of vertically stabilized Bridgman-Stockbarger semiconductor growth system is a thin layer, masking the cn;stal, where a weak form of the periodical struc ture of the crystal exists. In these conditions, using a new diffusion coef ficient in the equation of the dopant transport in the interface region, we compute the axial and radial variation of the dopant field in this region for crystal and melt with thermophysical properties similar to the gallium- doped germanium. We compare the results to those obtained in Mater. Sci. Se miconductor Process. V3/3 (2000) 115-121 [1], where we have changed the dif fusion coefficient only in the boundary condition for the dopant concentrat ion at the melt/solid interface. (C) 2000 Elsevier Science B.V. All rights reserved.