Effect of stress on interface transformation in thin semiconducting layers

Authors
Bak-Misiuk, J Domagala, J Misiuk, A Sadowski, J Zytkiewicz, ZR Trela, J Antonova, IV
Citation
J. Bak-misiuk et al., Effect of stress on interface transformation in thin semiconducting layers, THIN SOL FI, 380(1-2), 2000, pp. 117-119
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
380
Issue
1-2
Year of publication
2000
Pages
117 - 119
Database
ISI
SICI code
0040-6090(200012)380:1-2<117:EOSOIT>2.0.ZU;2-X
Abstract
The effect of high pressure (1.2. GPa)-high temperature (up to 1400 K) trea tment (HP-HT) on the structural properties of GaMnAs/GaAs, AlGaAs/GaAs and Si/SiO2/Si (SOI) structures was studied by high resolution X-ray diffractom etry. GaMnAs layers remain strained after the HP-HT treatment, while it res ults in anisotropic strain relaxation of AlGaAs. The change in lattice para meters of A(III)B(V) layers is explained as an effect of relaxation of the misfit strain via creation of misfit dislocations and of other extended def ects, as well as by diffusion of Mn or Al to dislocations. The treatment of SOI structures resulted in increased las compared to the effect of anneali ng at 10(5) Pa) strain between the Si top layer and the Si bulk. (C) 2000 E lsevier Science B.V. All rights reserved.