Study of GaAs spacer layers in InAs/GaAs vertically aligned quantum dot structures

We investigated vertically aligned InAs/GaAs QD structures, grown by atomic layer molecular beam epitaxy, with a number N of layers and with spacer th icknesses d. QD alignment and structure quality were checked by transmissio n electron microscopy. The dependencies of carrier capture, decay dynamics and existence of quenching channels on the design parameters N and d were s tudied by lime resolved photoluminescence (PL), PL excitation (PLE) and PL temperature-dependent measurements. Our results show that the carrier captu re and the radiative efficiency of the QDs are negatively affected by incre asing the number of QD layers and by reducing the spacer thicknesses; this effect is likely to be related to the increase of defect concentrations in GaAs spacers, due to relaxation of an increasingly large strain. (C) 2000 E lsevier Science B.V. All rights reserved.