Citation
Ms. Kagan et al., Terahertz emission of SiGe/Si quantum wells, THIN SOL FI, 380(1-2), 2000, pp. 237-239
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090
→ ACNP
Volume
380
Issue
1-2
Year of publication
2000
Pages
237 - 239
Database
ISI
SICI code
0040-6090(200012)380:1-2<237:TEOSQW>2.0.ZU;2-G
Abstract
THz emission of stimulated character was observed in Si/SiGe/Si quantum wel
l (QW) structures doped with boron. The resonance cavity formed by extremel
y parallel-structure planes due to total internal reflection, is necessary
for the emission. The mechanism for the possible population inversion of st
rain-split acceptor levels is proposed. (C) 2000 Elsevier Science B.V. All
rights reserved.