Quasi van der Waals epitaxy of ZnSe on the layered chalcogenides InSe and GaSe

ZnSe has been grown on van der Waals surfaces of the layered chalcogenides InSe and GaSe. Its growth morphology, epitaxial relation and electronic ban d lineup were studied using XPS, UPS, LEED and HRSEM. The II-VI materials s howed a strong tendency to form clusters on the low energy van der Waals su rfaces. LEED measurements showed a ZnSe(111)/Ga(In)Se(0001) epitaxial relat ion with strong facetting of the II-VI clusters deposited on GaSe. There wa s no evidence for a reaction layer between substrate and film, as deduced f rom UPS and XPS measurements. The band lineups for the ZnSe/InSe and ZnSe/G aSe heterointerface have been determined. (C) 2000 Elsevier Science B.V. Al l rights reserved.