Methods for depth profiling layered structures in the 10-100 nm range via i
on beam analysis, such as Rutherford backscattering spectrometry, channelin
g, nuclear reaction analysis and elastic recoil detection analysis, are des
cribed in connection with ion-beam synthesized silicides (beta -FeSi2 TaSi2
) and epitaxial regrowth of amorphous SiO2. Methods using implanted radioac
tive marker isotopes in nanometer thin films, such as perturbed angular cor
relation spectroscopy, will be sketched. (C) 2000 Elsevier Science B.V. All
rights reserved.