FEYNMAN DIAGRAMS AND FANO INTERFERENCE IN LIGHT-SCATTERING FROM DOPEDSEMICONDUCTORS

We present a diagrammatic approach to the calculation of quantum inter ference contributions to the Raman light scattering efficiency of dope d semiconductors. A three-band model within a parabolic approximation is used to account far the electronic and optical phonon Raman scatter ings under the condition of resonance coupling of an optical phonon wi th an inter-valence-band electronic continuum. Diagram techniques allo w us to compare the roles of various processes contributing to an asym metrical scattering profile.