Citation
Sg. Lee et al., High-Q poly-to-poly capacitor for RF integrated circuits, ELECTR LETT, 37(1), 2001, pp. 25-26
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194
→ ACNP
Volume
37
Issue
1
Year of publication
2001
Pages
25 - 26
Database
ISI
SICI code
0013-5194(20010104)37:1<25:HPCFRI>2.0.ZU;2-7
Abstract
A very high-Q poly-to-poly capacitor structure is proposed and measurement
results are presented. The poly-to-poly capacitor is designed using a conve
ntional 0.35 mum CMOS process. By optimising the design a Q-factor of > 120
is obtained at 2GHz.