Extremely large differential gain of 1.26 mu m GaInNAsSb-SQW ridge lasers

Authors
Shimizu, H Kumada, K Uchiyama, S Kasukawa, A
Citation
H. Shimizu et al., Extremely large differential gain of 1.26 mu m GaInNAsSb-SQW ridge lasers, ELECTR LETT, 37(1), 2001, pp. 28-30
Citations number
18
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
1
Year of publication
2001
Pages
28 - 30
Database
ISI
SICI code
0013-5194(20010104)37:1<28:ELDGO1>2.0.ZU;2-W
Abstract
The differential gain of long wavelength GaInNAs-based quantum film (QF) la sers and highly strained GaInAs-based QF lasers have been investigated for the first time. These lasers were grown by gas-source molecular beam epitax y, and include a small amount of Sb to improve the crystalline quality. GaI nNAsSb single quantum well (SQW) ridge lasers that oscillate at 1.258 mum h ave an extremely large differential gain of 1.06 x 10(-15) cm(2) in spite o f the SQW lasers; therefore GaInNAsSb lasers are suitable for high-speed la sers in the long wavelength region.