High-power and highly reliable 780nm band AlGaAs laser diodes with rectangular ridge structure

Authors
Hiroyama, R Nomura, Y Furusawa, K Okamoto, S Hayashi, N Shono, M Sawada, M
Citation
R. Hiroyama et al., High-power and highly reliable 780nm band AlGaAs laser diodes with rectangular ridge structure, ELECTR LETT, 37(1), 2001, pp. 30-31
Citations number
3
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
1
Year of publication
2001
Pages
30 - 31
Database
ISI
SICI code
0013-5194(20010104)37:1<30:HAHR7B>2.0.ZU;2-H
Abstract
A record light output power of 240mW has been achieved for 780nm band AlGaA s laser diodes by using a rectangular ridge structure. The laser diodes hav e been operated for > 1000h at 60 degreesC under 150mW pulsed operation.