TlInGaAs/InP DH LEDs with small temperature variation in EL peak energy

Authors
Konishi, K Asahi, H Maeda, O Zhou, YK Lee, HJ Mizobata, A Asami, K
Citation
K. Konishi et al., TlInGaAs/InP DH LEDs with small temperature variation in EL peak energy, ELECTR LETT, 37(1), 2001, pp. 49-50
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
1
Year of publication
2001
Pages
49 - 50
Database
ISI
SICI code
0013-5194(20010104)37:1<49:TDLWST>2.0.ZU;2-1
Abstract
TlInGaAs/InP double heterostructure light emitting diodes with a TI composi tion of 6% operating in the wavelength range of 1.58 mum have been fabricat ed by gas source molecular beam epitaxy and a very small temperature variat ion in the electroluminescence peak energy (-0.09meV/K) observed.