It is shown that the kinetic compensation effect (for conductivity called M
eyer-Nelder thermodynamic compensation rule) mathematically results from th
e exponential form of the Arrhenius rate constant and certain types of appr
oximations. A change of activation energy is thus compensated by the same c
hange in the logarithm of the pre-factor. As an example, resulting temperat
ure dependence of field effect and the activation energy can serve to demon
strate a useful tool for the estimation of the role of the interface states
while investigating insulator (SiO2 or SiNx) and amorphous (glassy) semico
nductor (a-Si).