Wordline voltage generating system for low-power low-voltage flash memories

A low-power wordline voltage generating system is developed for low-voltage flash memories, The limit for the stand-by current including the operation current for the band-gap reference and the stand-by wordline voltage gener ator is discussed. The system was implemented on a 1.8-V 32-Mb flash memory Fabricated with a 0.25-mum flash memory process and achieved with very low stand-by current of 2 muA typically, and high operating frequency of 25 MH z in read operation at 1.8 V, A low-voltage level shifter with high-speed s witching is also proposed.