Ka-band high-power and driver MMIC amplifiers using GaAs PHEMTs and coplanar waveguides

We report the design and fabrication of compact 2- and 3-stage coplanar (CP W) microwave monolithic integrated circuit (MMIC) amplifiers having high ou tput power at Ka-band. Based on a 0.15-mum gate length GaAs PHEMT process, a two-stage MMIC driver amplifier has demonstrated at 35 GHz, a linear gain of 11 dB, an output power at 1 dB gain compression P-1dB of 350 mW: and a saturated output power P-sat greater than 500 mW. For the same frequency, t he high-power CPW 2-stage amplifier achieved a linear gain of 9.5 dB, with P-1dB = 725 mW and more than 1 W of saturated output power Additional therm al management resulted in an increased performance, namely, 10.4 dB linear gain, P-1dB = 950 mW and P-sat = 1.2 W. To our knowledge, those are the hig hest output powers ever reported at Eia-baud for ang uniplanar MMIC.