This paper describes a specific technique for measuring and characterizing
the time-domain aspect of the crosstalk effect based on a sampling techniqu
e. It includes the description of the circuit implementation in 0.7-mum tec
hnology and the measurements of the crosstalk between metallization tracks
within the chip, with a 10-ps resolution and 10-mV precision. A comparison
between the measurements and analog simulations based on a distributed RC m
odel is also included. The key advantages of this technique are that it is
totally integrated, fully static, and adaptable to any CMOS technology.