Metal-semiconductor-insulator transitions in R3Ni compounds induced by hydrogenation

Citation
Sa. Nikitin et al., Metal-semiconductor-insulator transitions in R3Ni compounds induced by hydrogenation, J ALLOY COM, 314(1-2), 2001, pp. 22-28
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ALLOYS AND COMPOUNDS
ISSN journal
09258388 → ACNP
Volume
314
Issue
1-2
Year of publication
2001
Pages
22 - 28
Database
ISI
SICI code
0925-8388(20010116)314:1-2<22:MTIRCI>2.0.ZU;2-Q
Abstract
Electrical resistivity and ac magnetic susceptibility measurements of R3Ni and their hydrides R3NiHx were carried out. It is shown that the conductivi ty of R3NiHx compounds with a large amount of hydrogen have semiconductor a nd insulator conductivity type as compared with metallic conduction in the original compounds R3Ni. The resistivity of the original compounds is discu ssed on the basis of a conduction electron scattering model. Strongly modif ied transport processes of the hydrides are discussed on basis of a 'hoppin g' model. (C) 2001 Elsevier Science B.V. All rights reserved.