Interface-supersaturation estimated from the shape of steps on the surfaceof InP MCE by LPE

Shape of the steps in the InP microchannel epitaxy (MCE) was investigated t o determine the surface supersaturation, sigma, during the MCE growth. sigm a near the stacking fault (SF) where 2-D nuclei are generated has been esti mated. The ratio of the width-to-thickness (W/T ratio) of the MCE layer gro wn in the mode of 2-D nucleation at a SF is found to increase with decreasi ng sigma. This dependence is similar to that of the growth from a spiral st ep but sigma, where the W/T ratio starts to increase was found to move to a lower value. The mechanism by which the W/T ratio is determined is also di scussed. (C) 2001 Elsevier Science B.V. All rights reserved.