Growth model and morphology of Ti3SiC2 grains

Citation
K. Tang et al., Growth model and morphology of Ti3SiC2 grains, J CRYST GR, 222(1-2), 2001, pp. 130-134
Citations number
9
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
222
Issue
1-2
Year of publication
2001
Pages
130 - 134
Database
ISI
SICI code
0022-0248(200101)222:1-2<130:GMAMOT>2.0.ZU;2-O
Abstract
A model of the growth and morphology of Ti3SiC2 grains is presented in this work. In the growth of Ti3SiC2 grains, Ti6C octahedron can be recognized a s an integrated growth unit and the linking modes of Ti6C octahedra (such a s sharing planes, edges, or apexes) have strong influence on the growth beh avior and morphology of Ti3SiC2 Some experimental phenomena such as preferr ed orientation of the {1 1 (2) over bar 0} plane in CVD method, and some he xagonal sections in the morphology of the fractured surface can be well int erpreted using our model. (C) 2001 Elsevier Science B.V. All rights reserve d.