Growth, characterisation and surface cleaning procedures for high-purity tungsten single crystals

Citation
R. Cortenraad et al., Growth, characterisation and surface cleaning procedures for high-purity tungsten single crystals, J CRYST GR, 222(1-2), 2001, pp. 154-162
Citations number
23
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
222
Issue
1-2
Year of publication
2001
Pages
154 - 162
Database
ISI
SICI code
0022-0248(200101)222:1-2<154:GCASCP>2.0.ZU;2-D
Abstract
High-purity tungsten (W) single crystals have been prepared by the electron -beam floating zone melting technique. The structural quality of these crys tals was subsequently improved by the application of a strain-annealing tec hnique. X-ray diffraction methods revealed the near-perfect crystallographi c structure, and confirmed the absence of first- and second-order subgrains . The observation of the anomalous transmission of X-rays through the thick crystals, also referred to as the Borrmann effect, further substantiated t he structural perfection of the crystals. Well-ordered clean W surfaces fre e from all contaminants, were obtained by a two-step heating procedure. Fir st, the crystals were heated to 1500 K in an oxygen atmosphere for the remo val of the carbon impurities. Subsequent flashing to high temperatures (app roximately 2500 K) removed the excess oxygen remaining on the surface from the carbon-removal procedure. Low-energy ion scattering and Auger electron spectroscopy confirmed that the cleaning procedures removed all impurities and that the crystal faces expose only tungsten in the outermost atomic lay ers. Low-energy electron diffraction patterns showed unreconstructed(1 x 1) surfaces for the main crystallographic orientations. (C) 2001 Elsevier Sci ence B.V. All rights reserved.