Carbon doping of InAlAs in LP-MOVPE using CBr4

Authors
Ougazzaden, A Holavanahalli, J Geva, M Smith, LE
Citation
A. Ougazzaden et al., Carbon doping of InAlAs in LP-MOVPE using CBr4, J CRYST GR, 221, 2000, pp. 66-69
Citations number
6
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
221
Year of publication
2000
Pages
66 - 69
Database
ISI
SICI code
0022-0248(200012)221:<66:CDOIIL>2.0.ZU;2-S
Abstract
Carbon doping in InAlAs material grown with LP-MOVPE has been studied. Carb on tetrabromide (CBr4) has been used as a source of carbon. We investigated the influence of the growth parameter on the carbon incorporation. Carbon concentrations as high as 3 x 10(19) cm(-3) were achieved at the low temper ature of 530 degreesC and the low V/III ratio of 20. Post-thermal annealing was required to activate carbon atoms. Hole concentrations as high as 1.8 x 10(19) cm(-3) have been obtained. (C) 2000 Elsevier Science B.V. All righ ts reserved.