Comparison of MOVPE-based Zn diffusion into InGaAsP/InP using H-2 and N-2 carrier gas

The indiffusion of Zn into InGaAsP layers was studied using a MOVPE-based d iffusion process. Hydrogen and nitrogen were alternatively employed as carr ier gas to compare their effect on the diffusion behaviour. Using nitrogen, larger diffusion coefficients of Zn were obtained under comparable conditi ons. Whereas in InGaAs, maximum hole concentration levels of > 1 x 10(20) c m(-3) were obtained for both N-2 and H-2, i.e. a factor of 3-4 higher than achievable with MOVPE doping, there proved to be no enhanced doping effect in InP. As to the lateral diffusion uniformity superior results were obtain ed with nitrogen. (C) 2000 Elsevier Science B.V. All rights reserved.