In situ studies of the effect of silicon on GaN growth modes

We present real-time X-ray scattering studies of the influence of silicon o n the homoepitaxial growth mode of GaN grown by metal-organic vapor-phase e pitaxy. Both annealing of Si-doped GaN and surface dosing of GaN with disil ane are shown to change the mode of subsequent growth from step-flow to lay er-by-layer. By comparing the growth behavior induced by doped layers which have been annealed to that induced by surface dosing, we extract an approx imate diffusion coefficient for Si in GaN of 3.5 x 10(-18) cm(2)/s at 810 d egreesC. (C) 2000 Elsevier Science B.V. All rights reserved.