In situ monitoring of the MOCVD growth of CdS/CdTe

Citation
Sjc. Irvine et al., In situ monitoring of the MOCVD growth of CdS/CdTe, J CRYST GR, 221, 2000, pp. 117-123
Citations number
17
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
221
Year of publication
2000
Pages
117 - 123
Database
ISI
SICI code
0022-0248(200012)221:<117:ISMOTM>2.0.ZU;2-7
Abstract
A new method is proposed for the fitting of laser reflectance monitoring of a roughening film surface. This has been applied to the metal organic chem ical vapour deposition (MOCVD) of the CdS/CdTe photovoltaic structure, grow n onto ITO-coated glass substrates. It was found that the fitted roughening parameter, F-rs. correlates with the organometallic VI:II ratio in the CdT e layer growth. In particular, the slope of this parameter, giving the rate of roughening, has been quantified and relates to the series resistance of the solar cell. For the first time we now have an in situ measurement for this photovoltaic structure which provides an indication of one important f actor in the device performance and could eventually be used as a process m onitor. (C) 2000 Elsevier Science B.V. All rights reserved.