Tertiarybutylchloride (TBC) was used as precursor for etching InP and InGaA
sP layers in a MOVPE reactor. The effect of different process parameters on
the etching rate and morphology was investigated. Similar results were obt
ained for the carrier gases hydrogen and nitrogen. TBC etching was successf
ully tested for underetching of mesa stripes, as required in BH-type lasers
. Moreover, it proved to be an efficient method for in situ substrate clean
ing. (C) 2000 Elsevier Science B.V. All rights reserved.