MOVPE-based in situ etching of In(GaAs)P/InP using tertiarybutylchloride

Authors
Wolfram, P Ebert, W Kreissl, J Grote, N
Citation
P. Wolfram et al., MOVPE-based in situ etching of In(GaAs)P/InP using tertiarybutylchloride, J CRYST GR, 221, 2000, pp. 177-182
Citations number
9
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
221
Year of publication
2000
Pages
177 - 182
Database
ISI
SICI code
0022-0248(200012)221:<177:MISEOI>2.0.ZU;2-J
Abstract
Tertiarybutylchloride (TBC) was used as precursor for etching InP and InGaA sP layers in a MOVPE reactor. The effect of different process parameters on the etching rate and morphology was investigated. Similar results were obt ained for the carrier gases hydrogen and nitrogen. TBC etching was successf ully tested for underetching of mesa stripes, as required in BH-type lasers . Moreover, it proved to be an efficient method for in situ substrate clean ing. (C) 2000 Elsevier Science B.V. All rights reserved.