Growth pressure dependence of neighboring mask interference in densely arrayed narrow-stripe selective MOVPE for integrated photonic devices
Citation
S. Sudo et al., Growth pressure dependence of neighboring mask interference in densely arrayed narrow-stripe selective MOVPE for integrated photonic devices, J CRYST GR, 221, 2000, pp. 189-195
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
SICI code
0022-0248(200012)221:<189:GPDONM>2.0.ZU;2-A
Abstract
We have investigated the dependence of neighboring mask interference on gro
wth pressure in narrow-stripe selective MOVPE with arrayed stripe masks for
the growth of densely-arrayed optical waveguides. Atmospheric-pressure MOV
PE is effective in fabricating densely arrayed waveguide without inducing n
eighboring mask interference. On the other hand, low-pressure MOVPE has the
advantage that the distribution of PL-wavelength over the microarray waveg
uide can easily be controlled by utilizing neighboring mask interference. A
n appropriate mask pattern and growth conditions for fabricating integrated
photonic devices can thus be selected. A mask interference constant was in
troduced and used to simulate distributions of PL-wavelengths in arrayed wa
veguide. Simulated results matched experimental results well, (C) 2000 Else
vier Science B.V. All rights reserved.