Growth pressure dependence of neighboring mask interference in densely arrayed narrow-stripe selective MOVPE for integrated photonic devices

Citation
S. Sudo et al., Growth pressure dependence of neighboring mask interference in densely arrayed narrow-stripe selective MOVPE for integrated photonic devices, J CRYST GR, 221, 2000, pp. 189-195
Citations number
8
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
221
Year of publication
2000
Pages
189 - 195
Database
ISI
SICI code
0022-0248(200012)221:<189:GPDONM>2.0.ZU;2-A
Abstract
We have investigated the dependence of neighboring mask interference on gro wth pressure in narrow-stripe selective MOVPE with arrayed stripe masks for the growth of densely-arrayed optical waveguides. Atmospheric-pressure MOV PE is effective in fabricating densely arrayed waveguide without inducing n eighboring mask interference. On the other hand, low-pressure MOVPE has the advantage that the distribution of PL-wavelength over the microarray waveg uide can easily be controlled by utilizing neighboring mask interference. A n appropriate mask pattern and growth conditions for fabricating integrated photonic devices can thus be selected. A mask interference constant was in troduced and used to simulate distributions of PL-wavelengths in arrayed wa veguide. Simulated results matched experimental results well, (C) 2000 Else vier Science B.V. All rights reserved.