Constant growth of V-groove AlGaAs/GaAs multilayers on submicron gratings for complex optical devices

We have developed a new way of the constant growth technique to conserve a grating height of vertical-stacked V-groove AlGaAs/GaAs multilayer on submi cron gratings up to 1.5 mum thickness by a low-pressure metalorganic chemic al vapor deposition. The V-shaped GaAs buffer, grown on thermally deformed submicron gratings, has an important role in overcoming mass transport effe cts by recovering the deformed grating profile from sinusoidal to V-shaped. The low AlAs mole fraction is Favorable to preserve the grating height up to a greater thickness. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distribute d feedback lasers and two-dimensional photonic crystals. (C) 2000 Elsevier Science B.V. All rights reserved.