Epitaxial regrowth of AlGaInP on AlGaInP grooved structure by MOVPE

We present a study on the quality of AlGaInP epitaxial layers regrown on Al GaInP quaternary alloy grooved structure by low-pressure metalorganic vapor -phase epitaxy (MOVPE). The growth behavior and dislocations in the regrown layers are investigated by cross-sectional transmission electron microscop y (TEM). It is found that the dislocation density in the regrown AlGaInP ep itaxial layer depends on the growth temperature during the regrowth process . At a low growth temperature, high density of dislocations due to lattice mismatch was observed in the regrown layers. At higher temperatures, regrow n AlGaInP layers with drastically reduced dislocation density were obtained . (C) 2000 Published by Elsevier Science B.V.