Dj. Kim et al., Structural and optical properties of InGaN/GaN multiple quantum wells: Theeffect of the number of InGaN/GaN pairs, J CRYST GR, 221, 2000, pp. 368-372
The effect of the number of InGaN/GaN quantum well (QW) pairs on the interf
acial structural and optical properties of InGaN/GaN multiple quantum wells
(MQWs), as grown by low-pressure metalorganic vapor-phase epitaxy was exam
ined. As the number of QW pairs increased, In-rich InGaN precipitates were
more readily detected in the InCaN/GaN MQWs by cross-sectional transmission
electron microscope. The intensity of the photoluminescence (PL) peak was
decreased and the PL peak was red-shifted with an increase in the number of
QW pairs. X-ray diffraction measurements revealed that the interfacial str
ucture between InGaN and GaN were also deteriorated with the increasing num
ber of QW pairs. These results can be attributed to the relaxation of an ac
cumulated strain through the dislocations induced by an increase in the tot
al thickness of the MQWs with an increase in the number of QW pairs. These
results suggest that the defects such as dislocations facilitate the format
ion of In-rich phases in the InGaN layers in the MQWs. (C) 2000 Elsevier Sc
ience B.V. All rights reserved.