Deep levels in Sb-doped ZnSe fabricated by metalorganic vapor-phase epitaxy

Sb-doped ZnSe samples were deposited on the (001)GaAs substrate by metalorg anic vapor-phase epitaxy (MOVPE). Isothermal capacitance transient spectros copy (ICTS) and spectral analysis of deep-level transient spectroscopy (SAD LTS) were used to characterize deep levels of Sb-doped ZnSe. The p-type sam ple grown by MOVPE at 490 degreesC in the darkness shows three ICTS peaks. Three deep levels were observed in the N-doped ZnSe deposited by MOVPE. Usi ng the SADLTS. we can estimate the activation energy and the capture-cross section distributions of that hole traps. We also examined samples that wer e photoassist-deposited at lower temperature. The non-doped ZnSe thin films were also measured to check the effects of Light irradiation during the de position. We could get only n-type samples and the light irradiation genera tes the new level of the electron traps. Sb doping generates other new leve ls. The levels that correspond to trap E1 in the light-irradiated Sb-doped samples are constructed from two adjacent levels in SADLTS, and one new lev el near trap E1 can be observed in SADLTS. (C) 2000 Elsevier Science B.V. A ll rights reserved.