ZnMgCdSe structures on InP grown by MOVPE

Metalorganic vapor-phase epitaxy of ternary ZnMgSe and ZnCdSe layers, quate rnary ZnMgCdSe layers and superlattices on InP (1 0 0) is presented. The de pendence of the Cd- and Mg-incorporation into the ternary compounds on the molar ratio in the vapor phase, and the influence of the buffer material an d the growth conditions on the structural quality are discussed. A tendency to segregation and increased mosaicity is found in quaternary ZnMgCdSe str uctures with magnesium fractions exceeding 40%, evaluated by X-ray diffract ion, photoluminescence and transmission electron microscopy. (C) 2000 Elsev ier Science B.V. All rights reserved.