J. Kim et al., MOVPE growth and properties of P-I-N InGaAs/GaAs strained multi-quantum well structures on (111)A GaAs substrates, J CRYST GR, 221, 2000, pp. 525-529
In this paper we present the achievement of high-quality strained InGaAs/Ga
As piezoelectric quantum wells embedded in a P-I-N structure which was grow
n on a (1 1 1)A GaAs substrate at a single temperature by atmospheric press
ure metalorganic vapor-phase epitaxy, The growth conditions and the structu
ral and optical properties of a 10-period multi-quantum well structure with
an In content of 13% in the wells are presented. High-resolution X-ray dif
fractometry studies show good crystalline and interfacial quality. as well
as good repeatability of the quantum well parameters. A photoluminescence f
ull-width at half-maximum value of 11 meV at 12 K was determined for the pr
incipal quantum well interband transition. A monolayer analysis of the prin
cipal optical transition, which includes the piezoelectric field, indicates
a well width fluctuation of less than +/- 1 monolayer over the 10 quantum
well periods. (C) 2000 Published by Elsevier Science B.V.