Citation
R. Venkataraghavan et al., Influence of compressive strain on the arsenic incorporation in MOVPE-grown InAsP/InP single quantum wells, J CRYST GR, 221, 2000, pp. 535-539
Citations number
23
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248
→ ACNP
Volume
221
Year of publication
2000
Pages
535 - 539
Database
ISI
SICI code
0022-0248(200012)221:<535:IOCSOT>2.0.ZU;2-U
Abstract
In this paper we have studied the effect of MOVPE growth conditions on the
arsenic incorporation in strained InAsP quantum wells (QWs) grown on InP su
bstrates. Lower growth temperatures result in an enhanced arsenic incorpora
tion, as well as an improvement in the quality of the heterostructure. It i
s seen that an increase in the arsine flux does not readily increase the ar
senic composition in the film which is dependent on temperature. strain and
growth conditions. (C) 2000 Published by Elsevier Science B.V.