OMVPE fabrication of continuous transitions between GaAs/AlGaAs quantum wells and V-groove quantum wires

The fabrication of defect-free and continuous transitions between A1GaAs/Ga As quantum wells (QWs) and quantum wires (QWRs) using organo-metallic vapor phase epitaxy on variable-width V-grooved substrates is demonstrated. The basic idea of our approach is developed using a Monte-Carlo simulation of t he self-limiting growth on tapered grooves. A detailed surface and cross-se ctional atomic force microscopy study reveals the high quality of the resul ting coupled quantum structures. In particular, we demonstrate the efficien t control, brought about by this experimental technique, on the well-wire t ransitions. (C) 2000 Elsevier Science B.V. All rights reserved.