Formation of uniform 10-nm-scale InGaN quantum dots by selective MOCVD growth and their micro-photoluminescence intensity images

We have fabricated single InGaN quantum dots (QDs) embedded in hexagonal py ramids, using metalorganic chemical vapor deposition with selective growth. Strong emission was observed from the InGaN structures at room temperature . To directly identify the areas emitting at the InGaN PL peak wavelength, micro-photoluminescence intensity images were measured. The spatial width o f the emitting areas is about 300 nm, comparable to the spatial resolution of the micro-photoluminescence. These results indicate that a single InGaN QD is formed on top of each hexagonal pyramid. (C) 2000 Elsevier Science B. V. All rights reserved.