A high-emission-power n-side-up-type AlGaInP yellowish-green (YG) DH-LED ha
s been developed by operation current spreading technique utilizing dispers
ive ohmic electrodes configured above LP-MOVPE-grown n-AlGaInP cladding lay
er. The configuration of the ohmic electrodes was optimized based on the th
eoretical calculation of spreading manner of operation current supplied thr
ough low-resistive indium-tin-oxide (ITO) current spreading layer. The AlGa
InP DH-LED equipped with the dispersive ohmic electrodes and ITO window lay
er gave luminous intensity reaching up to 35 mcd at the dominant wavelength
of 574 nm. The forward voltage (V-t) was kept in the range between 1.9 and
2.2 V at a forward current of 20 mA. By the optimization of ohmic configur
ation and the transparent ITO window, the homogenous luminous intensity was
obtained from the whole of the emission area of the DH-LED. (C) 2000 Elsev
ier Science B.V. All rights reserved.