High-power ohmic-electrodes dispersive AlGaInP double-hetero structure yellowish-green light-emitting diodes

Citation
Y. Hosokawa et al., High-power ohmic-electrodes dispersive AlGaInP double-hetero structure yellowish-green light-emitting diodes, J CRYST GR, 221, 2000, pp. 652-656
Citations number
3
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
221
Year of publication
2000
Pages
652 - 656
Database
ISI
SICI code
0022-0248(200012)221:<652:HODADS>2.0.ZU;2-K
Abstract
A high-emission-power n-side-up-type AlGaInP yellowish-green (YG) DH-LED ha s been developed by operation current spreading technique utilizing dispers ive ohmic electrodes configured above LP-MOVPE-grown n-AlGaInP cladding lay er. The configuration of the ohmic electrodes was optimized based on the th eoretical calculation of spreading manner of operation current supplied thr ough low-resistive indium-tin-oxide (ITO) current spreading layer. The AlGa InP DH-LED equipped with the dispersive ohmic electrodes and ITO window lay er gave luminous intensity reaching up to 35 mcd at the dominant wavelength of 574 nm. The forward voltage (V-t) was kept in the range between 1.9 and 2.2 V at a forward current of 20 mA. By the optimization of ohmic configur ation and the transparent ITO window, the homogenous luminous intensity was obtained from the whole of the emission area of the DH-LED. (C) 2000 Elsev ier Science B.V. All rights reserved.