Optimization of MOVPE growth for 650 nm-emitting VCSELs

This paper reports on the optimization of the growth of visible-wavelength vertical-cavity surface-emitting laser (VCSEL) diodes by metalorganic vapou r-phase epitaxy (MOVPE). The VCSEL structure has an GaInP/AlGaInP quantum w ell active zone (AZ) sandwiched between AlGaAs/AlAs distributed Bragg refle ctors (DBRs). We present results on the optimization of the DBR reflectivit y and the electrical resistance of the p-DBR and discuss the switching sequ ence at the AZ to p-DBR interface which is critical due to the change of th e group V component. Using these optimized parameters 640-655 nm emitting V CSELs could be demonstrated, with a minimum threshold current density of 2. 8 kA/cm(2) at 654 nm. (C) 2000 Elsevier Science B.V. All rights reserved.