InP 1.3 mu m microcavity LEDs with high quantum efficiency

We report on the growth and the fabrication of InP-based microcavity light- emitting diodes (MCLEDs) operating at 1300 nm wavelength. Thus far, the MCL ED concept was mainly used in the GaAs material system. Due to the reduced refractive index contrast available in the InP material system, a transfer to longer wavelengths is certainly not straightforward. The transition from the ternary AlGaAs to the quaternary InGaAsP system poses an additional gr owth-technical challenge. First, results of our 1300nm MCLEDs indicate exce llent output power and high fiber-coupling efficiency. (C) 2000 Elsevier Sc ience B.V. All rights reserved.