High-power electrically injected mid-infrared interband lasers grown by LP-MOCVD

Electrical injection. interband mid-infrared lasers emitting between 3.2 an d 4.7 mum have been grown by low-pressure metal organic chemical vapor depo sition. A double heterostructure laser based on InAsSbP emitting at 3.2 mum emits at powers up to 450 mW in continuous mode operation. Additionally, s uperlattice lasers based on the InAsSb and InAsP alloys have been used for lasers emitting from 3.8 to 4.7 mum These lasers demonstrate threshold curr ent densities as low as 67 A cm(-2) and output powers over 900 mW. (C) 2000 Elsevier Science B.V. All rights reserved.