InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sources

We report on the applicability of a fully non-gaseous source (ngs) configur ation for MOVPE growth of InAlAs/InGaAs/InP heterostructures. The ngs confi guration is based on TBAs/TBP/TMAs as group-V precursors and DitBuSi/CBr4 a s dopant sources. Conventional group-III metalorganics and nitrogen-carrier gas are used. InAlAs/InGaAs RTD layer structures combined with carbon-dope d InP/InGaAs HBT layers are characterized in detail by HRXRD measurements a nd simulations. The InAlAs layers exhibit n-type background concentration o f n = 1.5 x 10(16) cm(-3) N = 1.7 x 10(17) cm(-3) determined by Hall and CV -measurements, respectively. Abrupt InAlAs/InGaAs heterojunction interfaces are deduced from the X-ray characterization. Fabricated RTDs exhibit a hig h peak current density of S-p > 1 x 10(5) A/cm(2) and a highly symmetric I- V characteristics. The RTD/HBT combination devices exhibit state-of-the-art device performance like a DC-current gain of B > 100 and a transit frequen cy of f(T) = 39GHz. (C) 2000 Elsevier Science B.V. All rights reserved.